According to a recent report, the French research institute Leti has unveiled a groundbreaking pressure-based fingerprint sensor developed through the European research project PiezoMAT. This innovative technology surpasses the current resolution standards set by the US FBI by more than double. The proof-of-concept device features a piezoelectric zinc oxide (ZnO) nanowire matrix grown on silicon, capable of capturing human fingerprint details at an impressive 1000 dots per inch (DPI).
Antoine Viana, the project manager at Leti, highlighted that this new sensor is fabricated by integrating ZnO nanowires onto silicon, paving the way for ultra-high-resolution fingerprint recognition systems. "Currently, smartphone fingerprint sensors typically operate at around 500 DPI," he explained. "This technology could significantly enhance security and identity verification applications." The project involved eight European institutions, including companies, universities, and research centers.
The prototype includes a silicon chip with 250 pixels and built-in circuitry for signal processing. While it demonstrates the core concept and key technical achievements, it hasn't yet reached the maximum potential of nanowire integration density. Future work will focus on improving resolution and exploring full electronic integration.
Throughout the four-year project, valuable expertise was gained in critical areas such as seed layer optimization, directional growth of ZnO nanowires on silicon, charge generation modeling, and polymer synthesis for packaging. Funded by the European Commission's Seventh Framework Programme, the project cost 2.9 million euros and involved notable partners like Fraunhofer IAF, the Hungarian Academy of Sciences, and OT-Morpho.
For more insights into fingerprint sensor technologies, you can refer to the "Fingerprint Sensor Applications and Technology - 2017 Edition" report.
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